Semiconductor

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Physics Interfaces and Study Types
ExpandSchrödinger EquationYes
ExpandSemiconductorYes
Predefined Multiphysics Interfaces
ExpandSemiconductor Optoelectronics, Beam Envelopes1YesYes
ExpandSemiconductor Optoelectronics, Frequency Domain1YesYes
Schrödinger Equation Boundary Conditions
Zero FluxYes
Zero ProbabilityYes
ExpandOpen BoundaryYes
ExpandPeriodic ConditionYes
Schrödinger Equation Volumetric Domain Properties
Effective MassYes
Electron Potential EnergyYes
Semiconductor Boundary Conditions
Surface Charge DensityYes
Thin Insulator GateYes
ExpandContinuity/HeterojunctionYes
ExpandElectrostatics Boundary ConditionsYes
ExpandInsulationYes
ExpandInsulator InterfaceYes
ExpandMetal ContactYes
Semiconductor Carrier Statistics
Fermi-DiracYes
Maxwell-BoltzmannYes
Semiconductor Discretization
Finite ElementYes
Finite Element (Log Equation Formulation)Yes
Finite VolumeYes
Semiconductor Volumetric Domain Properties
ExpandElectrostatics Domain PropertiesYes
ExpandSemiconductor Material ModelYes
Doping
ExpandAnalytic Doping ModelYes
ExpandGeometric Doping ModelYes
Generation-Recombination
Auger RecombinationYes
Direct RecombinationYes
Impact Ionization GenerationYes
Shockley-Read-Hall RecombinationYes
User-Defined GenerationYes
User-Defined RecombinationYes
Mobility Models
Arora Mobility ModelYes
Caughey-Thomas Mobility ModelYes
Fletcher Mobility ModelYes
Lombardi Surface Mobility ModelYes
Power Law Mobility ModelYes
User Defined Mobility ModelYes
Optoelectronics
ExpandIndirect Optical TransitionsYes
ExpandOptical TransitionsYes
Trap Density
ExpandAnalytic Trap DensityYes
ExpandGeometric Trap DensityYes
  1. Requires all indicated products